A new method for growing 2D materials paves the way for 2D transistors


Looking forward: An international team of scientists has published research on a new way to grow 2D materials with a method that could bring transistor-based 2D electronics to market sooner rather than later.

Moore’s Law isn’t dead yet, and it could soon be getting a new lease on life thanks to groundbreaking research by an international and multi-institutional team of scientists. In search of new ways to develop two-dimensional materials, researchers have developed what appears to be a “promising” growing process that can power next-generation electronics.

Intel and other technology companies are working hard to make the first chip containing trillion transistorsand they are all looking for new materials and compounds that are one atom thick (that is, “two-dimensional”) as a possible alternative to silicon for the production of said transistors.

Led by Sang Hoon Pae, assistant professor of mechanical engineering and materials science at the McKelvey School of Engineering at Washington University in St. Louis, and two other researchers, the new work includes Two technological breakthroughs that will make electronic devices “faster and use less power.”

Search was Published in Nature, and it envisions a growing method that can “overcome three very difficult challenges for creating new materials.” These challenges include securing single crystallization at the wafer scale, preventing irregular thickness during wafer-scale growth, and inhomogeneous columnar structures at the wafer-scale.

While the 3D materials used to manufacture conventional transistors go through a process of roughening and smoothing to become an even-surfaced material, the researchers say, 2D materials cannot, so the end result is an uneven surface “that makes it difficult to obtain high-scale, high-quality 2D materials.” unified.”

By designing “a confined architecture that facilitates kinetic control of 2D materials,” the scientists were apparently able to solve “all of the major challenges in growing high-quality 2D materials.” Another technical breakthrough is the demonstration of “chip-scale single-domain heterogeneous TMD systems.” The researchers used various substrates and chemical compounds to restrict the growth of the nuclei, using these substrates as a physical barrier to “prevent formation of lateral sclerites and force vertical growth.”

According to Sang-Hoon Bae, the new confined growth technique can “bring all the great results in 2D materials physics to a commercial level by allowing the construction of a single hetero-domain layer-by-layer on a wafer scale.”

The new achievement will lay a strong foundation for 2D materials to fit in industrial settings, accelerating the creation of new manufacturing processes for 2D transistors. Pai said other researchers are already studying this new material at very small sizes, from tens to hundreds of micrometres.



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